2005-02-21 rev. 2.2 page 1 SPN01N60C3 cool mos? power transistor v ds @ t jmax 650 v r ds(on) 6 ? i d 0.3 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance sot-223 vps05163 1 2 3 4 type package ordering code SPN01N60C3 sot-223 q67040-s4208 marking 01n60c3 maximum ratings parameter symbol value unit continuous drain current t a = 25 c t a = 70 c i d 0.3 0.2 a pulsed drain current, t p limited by t jmax t a = 25 c i d puls 1.6 gate source voltage static v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t a = 25c p tot 1.8 w operating and storage temperature t j , t stg -55... +150 c
2005-02-21 rev. 2.2 page 2 SPN01N60C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 0.8 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - soldering point r thjs - 35 - k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - 110 - 75 72 soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =0.8a - 700 - gate threshold voltage v gs ( th ) i d =250 , v gs = v ds 2.3 3 3.7 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.5 - 1 50 a gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =0.5a, t j =25c t j =150c - - 5.5 15.1 6 -
2005-02-21 rev. 2.2 page 3 SPN01N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =0.2a - 0.45 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 100 - pf output capacitance c oss - 40 - reverse transfer capacitance c rss - 2.5 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =0.3a, r g =100 - 45 - ns rise time t r - 30 - turn-off delay time t d(off) - 60 90 fall time t f - 30 45 gate charge characteristics gate to source charge q gs v dd =350v, i d =0.3a - 0.9 - nc gate to drain charge q gd - 2.2 - gate charge total q g v dd =350v, i d =0.3a, v gs =0 to 10v - 3.9 5 gate plateau voltage v (plateau) v dd =350v, i d =0.3a - 5.5 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2005-02-21 rev. 2.2 page 4 SPN01N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t a =25c - - 0.3 a inverse diode direct current, pulsed i sm - - 1.6 inverse diode forward voltage v sd v gs =0v, i f = i s - 0.85 1.05 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 200 340 ns reverse recovery charge q rr - 0.45 - c
2005-02-21 rev. 2.2 page 5 SPN01N60C3 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 w 1.9 SPN01N60C3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t a =25c 10 0 10 1 10 2 10 3 v v ds -3 10 -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 0.5 1 1.5 a 2.5 i d 5v 5.5v 6v 6.5v 7v 20v 10v
2005-02-21 rev. 2.2 page 6 SPN01N60C3 5 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.2 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 4 8 12 16 20 24 28 34 SPN01N60C3 r ds(on) typ 98% 6 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v gs 20 v 0 0.5 1 1.5 a 2.5 i d 7 typ. gate charge v gs = f ( q gate ) parameter: i d = 0.3 a pulsed 0 1 2 3 4 nc 5.5 q gate 0 2 4 6 8 10 12 v 16 SPN01N60C3 v gs 0.2 v ds max 0.8 v ds max 8 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a SPN01N60C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2005-02-21 rev. 2.2 page 7 SPN01N60C3 9 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 SPN01N60C3 v (br)dss 10 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 10 20 30 40 50 60 70 80 v 100 v ds 0 10 1 10 2 10 3 10 pf c c rss c oss c iss definition of diodes switching characteristics
sot-223 2005-02-21 rev. 2.2 page 8 SPN01N60C3
2005-02-21 rev. 2.2 page 9 SPN01N60C3 published by infineon technologies ag , 81726 munich, germany ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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